March 12, 2025 (EIRNS)—A team of researchers at Peking University claim to have made a breakthrough in chip technology, potentially reshaping the semiconductor race. The newly developed 2D transistor is said to be 40% faster than the latest 2-nanometer silicon chips from Intel and TSMC, while consuming 10% less energy. “It is the fastest, most efficient transistor ever,” reports an official statement published last week on the PKU website.
The breakthrough is based on a bismuth-based transistor that out performs the most advanced silicon-based transistors. According to chemistry professor Peng Hailin, U.S.-led sanctions have restricted China’s access to the most advanced silicon-based transistors, and have driven Chinese researchers to explore alternative solutions. “While this path is born out of necessity due to current sanctions, it also forces researchers to find solutions from fresh perspectives,” he said. “If chip innovations based on existing materials are considered a ‘short cut,’ then our development of 2D material-based transistors is akin to ‘changing lanes.’” 2D materials refers to crystalline solids consisting of a single layer of atoms.
The limitations of silicon-based chips have become increasingly evident as the industry attempts to push integration beyond 3 nanometers. To optimize performance, the researchers turned to 2D semiconductor materials. These materials have a uniform atomic thickness and higher mobility compared to silicon, making them a viable alternative for next-generation chips. The high dielectric constant of these materials reduces energy loss, minimizes voltage requirements, and enhances computing power while cutting energy consumption.
